"Researchers engineered a strained germanium layer on silicon that allows charge to move faster than in any silicon-compatible material to date," [1]reports Science Daily . "This record mobility could lead to chips that run cooler, faster, and with dramatically lower energy consumption.

"The discovery also enhances the prospects for silicon-based quantum devices..."

> Scientists from the University of Warwick and the National Research Council of Canada have reported the highest "hole mobility" ever measured in a material that works within today's silicon-based semiconductor manufacturing.... The researchers created a nanometer-thin germanium epilayer on silicon that is placed under compressive strain. This engineered structure enables electric charge to move faster than in any previously known silicon-compatible material...

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> The findings establish a promising new route for ultra-fast, low-power semiconductor components. Potential uses include quantum information systems, spin qubits, cryogenic controllers for quantum processors, AI accelerators, and energy-efficient servers designed to reduce cooling demands in data centers. This achievement also represents a significant accomplishment for Warwick's Semiconductors Research Group and highlights the UK's growing influence in advanced semiconductor materials research.



[1] https://www.sciencedaily.com/releases/2025/12/251204024240.htm